Abstract
The kinetics of Ga and N adatoms on semipolar GaN(112̄2) surfaces under growth conditions is investigated employing density-functional total-energy calculations. The energy barrier for Ga migration on the c(2×2) surface (1.2 eV) is found to be much higher than that on conventional c-plane (0001) surface (∼0.4 eV), leading to the desorption of both Ga and N atoms under conventional growth conditions. In contrast, both Ga and N atoms can be adsorbed and migrate without desorption on the 1×1 surface. These results imply that either low temperature or high-Ga pressure, in which the 1×1 surface is stabilized, is required to grow atomically flat GaN on (112̄2) orientation, consistent with recent experimental results.
Published Version
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