Abstract
Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non‐ohmic off‐state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off‐on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.
Highlights
Memory switching phenomena were observed in many materials, both in bulk materials as in thin films, in amorphous and polycrystalline materials as well as in single crystals. 1-3 Among all of these, the amorphous chalcogenide semiconductors are the most successful memory materials
Memory switching in other materials, like polycrystalline II-VI films, were investigated only sporadically
The literature about switching in ZnTe thin films is restricted to one article by Ota and Takahashi in 1973.s Our investigations are the first confirmation of the phenomena reported by Ota f The author is indebted to the National Science Foundation (N.F.W.O) for a research asslstantship
Summary
Laboratorium voor Elektronika en Meettechniek, Sint-Pietersnieuwstraat 41, B-9000 GENT, Belgium (Received February 13, 1980). Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole-Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal-ZnTe-metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write-erase lifetime (200 cycles) still constitutes a handicap for the operation as a device
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