Abstract
A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power $(P_{sat})$ of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP 1dB ) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
