A Wire Bondless SiC Switching Cell With a Vertically Integrated Gate Driver

Abstract

In this article, an SiC half-bridge module with an integrated gate driver is demonstrated. A physically and electrically compact integration scheme produces a decrease in the parasitic inductance of the critical switching loops in the circuit. Furthermore, a wire bondless integration scheme was devised for the power devices to keep the interconnect parasitic inductance to very low levels. This was realized by converting a bare die SiC power device into a flip-chip capable chip-scale package. This article provides a description of the implementation of the novel wire bondless chip-scale device packages in a switching cell with an integrated gate driver. The electrical performance of the module was evaluated, and very high slew rates of 24 V/ns were demonstrated with <5% overshoot. These results were encouraging for realizing high-frequency switching in SiC power electronic systems.