Abstract
Gallium nitride(GaN) process technology is gradually being used in the design of low-noise amplifiers(LNA) to obtain low-noise performance and high power tolerance ability. This paper presents a GaN monolithic microwave integrated circuits(MMIC) LNA operating in 21-36GHz frequency band, which is designed by 100nm GaN-on-silicon(Si) process. The proposed LNA uses a hybrid structure of common source and cascode. Simulation results show that this LNA can achieve a noise figure of 0.537-0.677dB and a gain of 28.3-30dB. The input and output return loss is better than −10dB, and the stability factor is greater than 1 within 0∼100GHz. P1dB and OIP3 are 16.5dBm and 26dBm, respectively. The proposed LNA has the performance advantages of low noise, high gain, and good linearity.
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