A Wideband LNA for Wireless Multistandard GSM/WiMAX Receiver in 130nm CMOS Process

Abstract

A wideband common-gate Low-Noise Amplifier (LNA) is designed and analyzed in $0.13\mu \mathbf{m}$ CMOS technology. Owing to positive feedback and a novel feed-forward technique, the proposed LNA has led to a very low Noise Figure (NF) without sacrificing linearity. The novel feed-forward technique includes AC coupling the input signal to the gate nodes of cascode stage transistors, in addition to the usual CG transistors excitement. Simultaneously, a positive shunt feedback samples the voltage signal at the source node of the cascode stage transistors and contributes to the overall input impedance match of the LNA. The voltage gain of 19.4 dB has been achieved over the wide frequency band of 0.9-5.5 GHz with a minimum NF of 2.83 dB. Input P1dB and IIP3 of the LNA are −14 dBm and −7 dBm, respectively. Utilizing a voltage supply of 1.2 V, the power consumption of proposed LNA is 5.2 mW. The proposed LNA may be used for the implementation of a multi-standard front-end supporting GSM900/1800 and mobile WiMAX standards, simultaneously.