A Wideband Doherty Power Amplifier With 100 MHz Instantaneous Bandwidth for LTE-Advanced Applications

Abstract

In this letter, a 698-862 MHz wideband Doherty power amplifier (DPA) with 100 MHz instantaneous bandwidth is presented. The electrical memory effect of the wideband DPA is reduced by the LC resonant circuits employed in the drain bias networks. The influence of the integrated Doherty combiner is compensated by the broadband output matching networks, which were designed by applying the simplified real frequency technique. Driven with 100 MHz LTE-advanced signals, the adjacent channel leakage ratio (ACLR) and ACLR asymmetry of the proposed DPA at 20 MHz offset are improved by about 4 dB and 3 dB respectively, compared to the wideband DPA with conventional bias networks. After digital predistortion (DPD) linearization, the proposed DPA shows an ACLR of lower than -48 dBc at an average output power of 42.5 dBm, and high drain efficiency of over 42% across the operating frequency range.