A Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon

Abstract

For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current losses in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and a full- coupled transformer loop and, in the meanwhile, distributed characteristics of parasitic capacitance are captured by 2pi equivalent-circuit. Up to 15GHz, the model reveals quite good accuracy within 8% with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff, resistor RFIC and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.