Abstract
A low-distortion linear variable resistor using an offset gate buried-channel MOSFET fabricated by SIMOX technology is described. The offset gate structure on the insulating substrate provides 15 to 100 k/spl Omega/ drain-to-source resistance, and 2.5% total harmonic distortion at 100 k/spl Omega/. In a battery-feed circuit application for a subscriber-line interface circuit, the area of a variable conventional polysilicon resistor.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
