Abstract
A new wide-band low-noise charge transfer video delay line is introduced utilizing a bulk charge transfer device (BCD) with a self-aligned electrode structure, and a simple integrated sample-hold circuit. Brief analysis of charge transfer characteristics of the BCD and design considerations for the proposed device are included. Several kinds of 128-element devices are designed and examined. Measured transferred signal bandwidth is 4 MHz at 10 MHz clock of voltage swing as low as 10 V, with signal-to-noise (S/N) ratio of 42 dB. The device itself can operate beyond 20 MHz clock rate. Moreover, the device features the use of an elaborate sample-hold circuit to eliminate the complex reset pulse and filtering circuitry, high packing density of 18 /spl mu/m per element with 3-/spl mu/m line spacings assuring a high fabrication yield, and process compatibility with conventional Si gate MOS technology.
Published Version
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