Abstract
In this paper, a high-performance SIW filter has been designed and fabricated by the 90 nm GaAs monolithic microwave integrated circuit (MMIC) technology. To acquire the initial physical dimensions of filter, coupling matrix theory has been used. Meanwhile, ground-signal-ground (GSG) pads configurations are also developed for on-wafer measurement. The measured results show the filter has a center frequency of 93GHz with the bandwidth of 2.2 GHz, and the in-band insertion loss is lower than 4.8 dB. Furthermore, the measured results and simulated results reach a high degree of consensus. This work manifests that high-performance SIW can be realized by GaAs MMIC technology.
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