Abstract
This paper presents a W-band low power, wideband low noise amplifier design in 65nm CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate communication system, the wideband characteristic is very important. In order to enhance the 3 dB bandwidth, a two-center frequency technique is used. In addition, the amplifier was realized by a conjugate matching technique to achieve low-loss between each stage. The measured results show that the LNA can provide a gain of 22dB with a 3 dB bandwidth of 20 GHz. The LNA consumes 21 mW from a 1 V supply voltage, achieving S11 better than −10 dB for frequencies 67∼ over 110 GHz, S22 better than −10 dB for frequencies 69∼102 GHz. Furthermore, the LNA achieves minimum noise figure (NF) of 6.8 dB at 81 GHz and NF of 6.8∼10.4 dB within a 3 dB gain bandwidth.
Published Version
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