Abstract
AbstractThis article presents a W‐band preamplified power detector (PD) monolithic microwave integrated circuit (MMIC). The chip consists of a pseudomorphic high electron mobility transistor (pHEMT) PD with a six‐stage low noise amplifier (LNA) in a commercial 0.1‐μm GaAs pHEMT technology. In order to reduce the high risk of oscillating in a multistage LNA, a circulator‐based method for LNA interstage stability simulation, along with the concept of loop gain, is introduced and analyzed. The simulated loop gain of each node of the LNA is calculated through the proposed method to ensure the unconditional stability for the six‐stage LNA. By incorporating the high gain LNA over 32 dB in the front‐end of the PD, the measured chip achieves a peak responsivity of 3.4 MV/W and a minimum noise equivalent power (NEP) of 95 fW/Hz1/2 both at 85 GHz. To the best of the authors' knowledge, the proposed PD exhibits the best responsivity and NEP in published W‐band GaAs PD MMICs.
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