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Abstract
In order to achieve monolithic integration of thermoelectric power sensor and its amplification system and improve the measurement accuracy of microwave power, a voltage source model is researched in this paper. And the thermoelectric power sensor is designed and fabricated using MEMS technology and GaAs MMIC process. It is measured in the X-band (8–12 GHz) with the input power in 100 mW range. When the input microwave power is at 10, 50 and 100 mW, respectively, the frequency dependent coefficient k1 is −0.073, −0.39 and −0.82 mV/GHz, respectively. The sensitivity coefficient k2 is 0.311, 0.303, 0.293, 0.284 and 0.279 mV/mW at 8, 9, 10, 11 and 12 GHz, respectively, and has an excellent linearity. Based on the voltage source model, the feedback coefficient of its amplification system is set to 0.0078 × Pin to compensate the loss power caused by frequency dependent characteristic. In addition to miniaturization and low cost, an advantage using this model is significantly improved measurement accuracy.
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