Abstract
In this paper, a vertical monolithical MOS thyristor bi-directional device having all the main power electrodes and the MOS control gate electrodes on one side of the wafer is proposed. Its operating modes are described and verified by qualitative two dimensional numerical simulations. This device has a vertical current conduction ability which enables it to conduct high currents and it can block high voltages. Moreover, the fact that all the main power electrodes and the MOS control gate electrodes are on the upper side of the silicon wafer allows to overcome the packaging constraints encountered in some of the proposed, in the state of the art, vertical bi-directional MOS controlled devices.
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