Abstract
A versatile 600 V BCD process using thin epitaxial technology has been realized for high voltage applications. High voltage double RESURF LDMOS with the breakdown voltage up to 900 V as well as low voltage CMOS and BJT have been achieved using this high voltage BCD process. An experimental half bridge gate drive IC is also successfully implemented, the high side floating offset voltage in the half bridge drive IC is above 850 V with a conventional level shifting structure, and the detrimental effect of the high voltage interconnection metal line can be almost ignored using this high voltage BCD process without using additional mask or process. The major features of this process for high voltage applications have been clearly demonstrated.
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