Abstract
In this paper, an analysis of a general memristor model is discussed. This analysis is generated using a proposed Verilog-A model. We prove that this model correlates the experimental characterization data of the HfO2-based OxRRAM memristor device and investigate the characteristics of both bipolar and unipolar memristor behaviors. Our simulation results carry the desired nonlinear memristor fingerprint, and the applicability to fit and simulate different switching behaviors. These results are verified by both electrical and experimental characterization data. Hence, these results suggest that the Verilog-A model is suitable for logic circuits, low-power and high-density applications at the industrial levels.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
