A Variational Approach for the Calculation of Single Electron States in Semiconductor Heterostructures

Abstract

A different variational scheme for the calculation of conduction band energy levels is proposed for the study of single electron states in the quasi-two-dimensional gas of semiconducting heterostructures. The method uses a trial potential energy function which essentially results from the local density Thomas-Fermi theory of a two-dimensional gas of interacting electrons. The model potential is then written as a combination of this Hartree contribution plus a typical triangular quantum well. The calculation of the lower electronic states in a AlN/GaN single heterostructure is presented as an application.