Shallow-donor states in semiconductor heterostructures within the fractional-dimensional space approach

Abstract

Shallow-donor states in quantum-sized semiconductor heterostructures are studied within the fractional-dimensional space approach. Calculations were performed for the binding energies of the ground state of donors in GaAs–(Ga,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. Fractional-dimensional theoretical results are shown to be in good agreement with previous variational calculations.