Abstract
The surface electric field (E-field) optimization of AlGaN/GaN devices is very important because the two-dimensional electron gas channel is extremely close to the surface. In this work, a novel variable nanotrench (VNT) structure for E-field modulation in AlGaN/GaN devices is proposed and demonstrated. The effectiveness of the VNT-structure in optimizing the surface E-field is investigated by the technology computer aided design simulation. Single step dry etching is developed to fabricate the VNT-structure. Benefitting from the VNT-anode, the fabricated lateral AlGaN/GaN Schottky barrier diode exhibits improved performance including reduced leakage current, increased breakdown voltage, and suppressed electron trapping under reverse bias.
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