Abstract
The surface electric field (E-field) optimization of AlGaN/GaN devices is very important because the two-dimensional electron gas channel is extremely close to the surface. In this work, a novel variable nanotrench (VNT) structure for E-field modulation in AlGaN/GaN devices is proposed and demonstrated. The effectiveness of the VNT-structure in optimizing the surface E-field is investigated by the technology computer aided design simulation. Single step dry etching is developed to fabricate the VNT-structure. Benefitting from the VNT-anode, the fabricated lateral AlGaN/GaN Schottky barrier diode exhibits improved performance including reduced leakage current, increased breakdown voltage, and suppressed electron trapping under reverse bias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
