Abstract
V-band, high gain, low noise, monolithic amplifiers based on 0.15-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT's have been developed. The four-stage amplifier has been assembled on a small hermetically sealed metal package and has achieved a noise figure of 3 dB with a small signal gain of 42.2 dB at 51 GHz. The overall amplifier measured 14.2/spl times/20.0/spl times/2.3 mm/sup 3/. The two-stage amplifier has been mounted on a carrier-type fixture and has achieved a noise figure of 2.5 dB with a small signal gain of 20.4 dB at 51.5 GHz. These results represent the best noise figure and the highest gain ever achieved by a monolithic amplifier using GaAs- or InP-based HEMT devices at these frequencies. >
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