Abstract

A $V$ -band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of −5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported $V$ -band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.

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