A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors

Abstract

This paper presents a universal SPICE model for field-effect transistors, which is independent from technology and semiconductor material. The created behavioral simulation model is based on a set of collected measurement data. The temperature-dependent output characteristics are modeled using a hybrid approach consisting of lookup tables and analytical equations. This leads to fast simulation times and very high accuracy. The validity for the static temperature-dependent behavior of this approach is verified for one SiC and one GaN transistor using the respective datasheet curves. The transistors nonlinear capacitances are modeled in dependence of their inter-electrode voltages. In order to verify the validity in the dynamic range, the universal model is applied to a GaN high-electron-mobility transistor. Double pulse measurements are used for the dynamic validation at a characterized measurement test bench regarding its parasitic elements. Therewith a proper validation of the simulation model at switching transients as low as 5 ns is achieved.