Abstract
We have discovered what appears to be a unique contact system for use on p-type InP. The new contacts provide low resistance contact to p-InP without the violent metallurgical intermixing that would normally take place between the emitter material and the contact metallization during the contact sintering process. With this new contact system, which is composed of a combination of Ag and Zn, it is possible, for the first time, to make low resistance ohmic contact directly to a shallow junction p/n InP device without destroying the device while doing so. Specific contact resistivity values in the low 10−4 Ω-cm2 range are readily achieved. After a description of the new system, we suggest possible mechanisms to explain the observed behavior.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
