Abstract
Based on the zero-point energy Eo induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λ.qm is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λqm is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.
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