Abstract
This brief presents a novel scaling theory for fully depleted, multiple-gate (MG) MOSFET. The scaling theory is derived from the equation for effective number of gates (ENGs), ENGQG=ENGDG,1+ENGDG,2 where the MG device can be genuinely broken into two equivalent double-gate (DG) transistors working in parallel based on the perimeter-weighted-sum method. Numerical device simulation data for drain-induced-barrier-lowering were compared with the model to validate the formula. Using the scaling theory, the minimum effective channel length improvement factor of ρMG=1-(ENGDG/ENGMG)1/2 shows an improvement of up to 30% in the minimum effective channel length for the MG MOSFET in comparison with DG MOSFET.
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