Abstract
This paper presents a unified analytical charge model for long channel symmetric double-gate (DG) and surrounding-gate (SGT) MOSFETs. The proposed analytical charge model continuously covers all the operation regions and achieves both computation efficiency and high accuracy. Unified intrinsic capacitance model for both DG and SGT MOSFETs is also presented for AC simulation. A detailed comparison between the analytical model and numerical solution is conducted to demonstrate the accuracy of the model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.