Abstract
A calibrated and physically based mobility model is developed for three-dimensional simulation of submicron metal-oxide-semiconductor (MOS) devices, in which the inversion layer mobility is emphasized. This inversion layer mobility can be generalized into a local form, i.e., expressed as functions of the local electric field at each grid point, so that it is well suited for device simulation. The resulting 3-D mobility model accurately characterizes the significant physical scattering effects including the Coulomb screening effect, quantum channel broadening effect, surface roughness scattering, structure-induced lateral surface scattering and velocity saturation limited effects. Results show that this new model can be incorporated into device simulators for accurately predicting drain currents of submicron LDD MOS devices. Moreover, the results compare more favorably with the experimental data than do those for other reported models.
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