Abstract
A precise two-dimensional modeling for ion implantation based on Boltzmann transport equation is presented, in order to obtain impurity distributions for current small dimensioned devices. Ion irradiation region dependence of the distributions is calculated for As+ ion implants in silicon. Good agreement between experimental results and calculations for sufficiently large irradiation region implants, is successfully obtained in range distribution comparison. This modeling is applicable to design two-dimensional multilayered and fine structured devices.
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