A two-terminal binary HfO2 resistance switching random access memory for an artificial synaptic device

Xiaozhang Chen, Longxing Su + Show 4 more

https://doi.org/10.1039/d2tc03454a

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Journal: Journal of Materials Chemistry C	Publication Date: Jan 1, 2023
Citations: 1

Abstract

We reported a HfO2 RRAM using an innovative tablet method by pressing the HfO2 nanocrystals into a circle-shaped ceramic wafer under high pressure.

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