Abstract
Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.
Highlights
Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field
A challenge is to engineer a material that is capable of transporting spins over long distances and has a strong enough spin–orbit coupling (SOC) to allow their electrical manipulation at temperatures above few Kelvin
The combination of graphene with MoS2 in a heterostructure through weak van der Waals forces[28] allows us to engineer an alternative type of field-effect switch for spin transport
Summary
Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. A challenge is to engineer a material that is capable of transporting spins over long distances and has a strong enough spin–orbit coupling (SOC) to allow their electrical manipulation at temperatures above few Kelvin. Various approaches have been taken to enhance the SOC of graphene, for example through proximity effect[16,17,18] or by atomic doping[19], a direct evidence on the modulation of spin transport by an electric field remains elusive. The combination of graphene with MoS2 in a heterostructure through weak van der Waals (vdW) forces[28] allows us to engineer an alternative type of field-effect switch for spin transport. The current device could be scalable and operative at room temperature, considering both the rapid progress made in chemical vapour deposition of two-dimensional (2D) materials and the theoretical performance of the materials involved
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