Abstract
Abstract The carrier tunneling dynamics of self-assembled InAs quantum dots (QD) is studied using a time-resolved conductance measurement of a nearby two-dimensional electron gas (2DEG). The investigated heterostructures consist of a layer of QDs with different coupling strengths to a 2DEG, adjusted by different thicknesses of the spacer layers. We demonstrate a strong influence of charged QDs on the conductance of the 2DEG, even for very weak coupling between the QD layer and the 2D system, where standard capacitance (C)–voltage (V) spectroscopy is unsuitable to investigate the electronic structure of these QDs.
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