Abstract
AbstractThe carrier tunneling dynamics of self-assembled InAs quantum dots (QD) is studied using time-resolved conductance measurements of a nearby two-dimensional electron gas (2DEG). The coupling strength (tunneling time) between the QDs and the 2DEG is adjusted by different thicknesses of the spacer layers. We demonstrate a strong influence of charged QDs on the conductance on the 2DEG, even for very weak coupling, where standard C-V spectroscopy is unsuitable to investigate the electronic structure of these QDs.KeywordsIII-V semiconductorsindium compoundsself-assemblysemiconductor quantum dotstunnellingtwo-dimensional electron gas
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