Abstract
An accurate numerical analysis for predicting characteristics of MOSFET's Fabricated on an epitaxial Si layer on top of a buried SiO 2 layer formed by oxygen ion implantation is presented. Basic equations, that is, the current continuity equation for minority carriers, Poisson's equation, and the equation for the majority-carrier concentration including carrier multiplication due to impact ionization, are iteratively calculated for obtaining a self-consistent solution. Good agreement between theoretical and experimental results was obtained over a wide range of device parameters and terminal biases. Threshold dependence upon Si/buried SiO 2 interface charge as well as Si film thickness is shown. As the Si film and buried SiO 2 thicknesses are reduced, the threshold voltage shift with channel shortening becomes smaller. Finally, theoretical analysis shows that the short-channel effect in MOSFET fabricated on an epitaxial layer with an underlining buried SiO 2 layer is smaller than those in bulk Si MOSFET and MOSFET/SOS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
