Abstract
The PbTe films were grown on Si(1 1 1) substrate by hot wall epitaxy (HWE). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the films. The results show that the PbTe films are twinned ones with preferred 〈1 0 0〉 orientation. The angles of normal direction of PbTe(1 0 0) facets which are perpendicular to the surface of Si substrate are 30° or 60°. The interface energy is calculated by CASTEP module of materials studio and the reason for this phenomenon is discussed.
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