Abstract
The PbTe films were grown on hydrogen-terminated Si(1 1 1) [H-Si(1 1 1)] substrate by the hot wall epitaxy method. These films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and I– U measurement. The XRD spectrum revealed that PbTe films grown on H-Si(1 1 1) substrate have a preferred 〈1 0 0〉 orientation. XRD and SEM analyses showed that their crystalline quality is better than that grown on Si(1 1 1) substrates. Nucleation SEM picture shows that the growth of PbTe on Si(1 1 1) is of the Volver–Weber mode. I– U measurement indicated that n-PbTe/H–P–Si(1 1 1) heterojunction has a good junction character.
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