Abstract
MBE grown quantum devices for the detection of infrared light are introduced. These structures are based on photon-assisted resonant tunnelling and will have a projected tuning range of 5 to 30 mu m. Two structures are discussed: a single quantum well device with large initial population for high adsorption, and a double quantum well structure with promise of sharper detection linewidth and wider tuning range. Optical and electrical measurements of material properties are presented, and their implications on the devices discussed.
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