A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure

Y H Kong,X Fu,S Y Chen,G L Zhang

doi:10.1155/2013/316897

Y H Kong, X Fu + Show 2 more

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https://doi.org/10.1155/2013/316897

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Abstract

We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel configuration on top of the GaAs heterostructure. The GMR effect ascribes a significant electron transmission difference between the parallel and antiparallel magnetization configurations of two FM stripes. Moreover, the MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. Thus, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB.

Highlights

Since the discovery of the giant magnetoresistance (GMR) effect in 1988 [1], GMR systems have attracted a wealth of experimental and theoretical attentions in recent years
The degree of the GMR effect is usually characterized by a striking drop of the electric resistance from P to AP alignment, that is, the magnetoresistance (MR) ratio that is de ned by MR = (GGP − GGAP)/GGAP, where GGP and GGAP are the conductances for
From the dependence of the UUeff on the magnetic pro le BBzz(xxx, one can see that, for the device presented in (Figure 1(a)), when the P alignment (Figure 1(b)) turns to the inverse Figure 1(c), UUeff varies substantially. It is the dependence on the magnetic con guration of UUeff that results in the GMR effect in the nanosystem

Summary

Research Article

A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure. We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel con guration on top of the GaAs heterostructure. E GMR effect ascribes a signi cant electron transmission difference between the parallel and antiparallel magnetization con gurations of two FM stripes. The MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. Us, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB The MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. us, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB

Introduction

Results and Discussion

Transmission Transmission

GAP GP

Conclusions