Abstract
Relaxed (110) surfaces of GaP, GaAs, and GaSb are studied by cluster calculations. Strongly localized surface states near the band gap are presented. It is shown that Ga dangling-orbital surface states can occur within the band gap as a result of a strong decrease in the anti-bonding character of surface Ga orbitals. A trend in the bond length on going from GaSb to GaP explains experimental data. Surface states associated with the group-V atoms are also described.
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