Abstract
A planar and ultra-short gallium nitride (GaN) diode structure is investigated as a potential Terahertz (THz) range negative differential resistance (NDR) diode. An empirical velocity-field relation, exhibiting a peak electron velocity as high as 7 × 10 7 cm/s, is employed to characterize the high-field transport in the simulations, accounting for ballistic electron acceleration and velocity reduction due to phonon build up. The resulting device operation is in accumulation-layer transit-time mode and large-signal circuit simulation results are reported along with discussions. Conversion efficiencies up to ∼3.4% at ∼1.5 THz are shown to be possible.
Published Version
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