A three-region analytical model for short-channel SiC MESFETs

Abstract

An improved analytical three-region model is proposed for short-channel SiC metal semiconductor field effect transistors (MESFETs). It takes into account two regions in the channel under the gate, and a third ungated high field region between the gate and the drain. This third region, which has been omitted in SiC MESFETs analytical models reported so far, experiences a large potential drop in short channel devices operating under high drain voltages. Therefore, its inclusion is critical in providing an accurate device modeling. To further improve our model, we have also incorporated parasitic resistances and incomplete ionization of dopants. Using this three-region analytical model, we have simulated the I– V characteristics of SiC MESFET with a 0.70 μm gate length, and obtained excellent agreement when compared with published experimental results.