Abstract
This paper presents a three stage gain cell topology formed by a common gate, common source, common gate DC-decoupled configuration with conjugate complex interstage matching. The common gate (CG) cell at the input is selected in order to achieve an active ultra-wideband matching in an 50 Ω enviroment in H-Band. This amplifier, fabricated in a 35 nm InGaAs-based metamorphic high electron mobility transistor (mHEMT) technology, is designed with a center frequency of 290 GHz and cell achieves an ultra-wideband input matching of 67GHz below −10 dB. The cell reaches a small-signal gain of 9.8 dB and a 3 dB-bandwidth of 16 GHz with an simulated OP1 dB of 5.3 dBm and is realized as a millimeter-wave monolithic integrated circuit and is characterized by on-wafer measurements.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
