Abstract

A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is realized as millimeter-wave monolithic integrated circuit (MMIC) and makes use of metamorphic high electron mobility transistor (mHEMT) technology. The amplifier employs an advanced power combining approach allowing for broadband designs. At 115 GHz, the MMIC provides a gain of 26dB and at 120 GHz an output power of 10mW. Its 3-dB bandwidth spans from 105 to 140 GHz leading to an absolute and relative bandwidth of 35 GHz and 29%, respectively.

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