A three-dimensional numerical simulation study of the Marangoni convection occurring in the crystal growth of Si xGe 1− x by the float-zone technique in zero gravity

Abstract

A numerical simulation study was carried out to examine the effect of solutal Marangoni convection during the Si x Ge 1− x crystal growth by the floating-zone (FZ) technique under zero gravity. In this study, a three-dimensional full-zone configuration for the FZ was considered. Computational results show that the contribution of the solutal Marangoni convection to the flow structure was significant although the strength of the solutal Marangoni convection is much weaker than that of the thermal Marangoni convection. Application of a crystal and feed rotation with an optimum rate induces a good mixing in the melt and leads to crystals with a uniform concentration distribution along the growth interface.