A thin SiO layer as a remedy for the indium reduction at the In 2O 3/μc-Si:C:H interface

Abstract

The reduction of the In 2O 3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In 2O 3/pi junction show that the SiO layer benefits the opto-electrical characteristics.