Year-end Sale % OFF 
Abstract
In this paper, the design, fabrication and measurement of a thermoelectric MEMS microwave power sensor with the terminal load inline self-detection function is proposed. The structure of the sensor mainly includes a coplanar waveguide, a thermopile, two terminal load resistors and two calibration resistors. In order to realize the inline self-detection function, the load and calibration resistors are designed to form a voltage divider circuit. The fabrication of this sensor is compatible with the GaAs MMIC technology. The on-chip performance is tested by using a microwave experimental platform. The measured reflection loss is less than −10 dB at 0.1–10 GHz. When the bias voltage is not applied, the sensitivity of the sensor is 47.39 μV/mW@5 GHz and 32.58 μV/mW@10 GHz, respectively, and when the bias voltage is applied, the sensitivity is 47.50 μV/mW@5 GHz and 32.73 μV/mW@10 GHz, respectively. The difference between the two cases is less than 0.5% at the same frequency, which indicates that whether or not to apply the bias voltage has little effect on the sensitivity. In addition, when the calibration resistance is increased from 50 to 100 Ω, the current flowing through the load resistance is decreased under the same bias voltage. Therefore, the DC power consumed on the load resistance will be significantly reduced. This makes the measured and theoretical results show better agreement, thus verifying the validity of the design.
Highlights
IntroductionPublisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations
Power detection plays an important role in microwave and millimeter-wave wireless applications, such as modern personal communication systems and radar systems. These systems require that the power sensors have low volume, wide frequency band, low reflection loss, zero dc power consumption and compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process, and so on [1–3]
The thermoelectric MEMS microwave power sensor with the inline self-detection function is fabricated by using the GaAs MMIC process [17]
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Power detection plays an important role in microwave and millimeter-wave wireless applications, such as modern personal communication systems and radar systems These systems require that the power sensors have low volume, wide frequency band, low reflection loss, zero dc power consumption and compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process, and so on [1–3]. Micromachines 2022, 13, 239 on the MEMS technology show advantages of low volume, wide frequency band, low reflection and insertion losses, zero dc power consumption, high sensitivity and linearity, compatibility with the GaAs MMIC process, etc. The other, proposed by Fernandez et al, is a capacitive-type MEMS microwave power sensor based on sensing the equivalent electrostatic force between the suspended beam and the microwave signal line [9–11] It shows low reflection and insertion losses, high sensitivity and large dynamic range. In order to obtain convenient and accurate inline measurement of microwave power, the thermoelectric MEMS microwave power sensor with the terminal load inline self-detection function is proposed in this paper
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
