Abstract
Sublimation-recrystallization phenomena occurring during the PVT growth of SiC single crystals are examined from the viewpoint of quasi-equilibrium phase transition using pressure-dependent Si-C binary phase diagrams. From the results obtained, it is concluded that a thermodynamic interpretation for the PVT growth is consistently possible; the PVT process for SiC is comprised of a combination of elemental reactions driven by transition between phases at the growth temperatures. In addition, various phenomena observed during the PVT growth, such as silicon droplet formation, in-situ etching, and hexagonal void movement, are also discussed based upon the phase diagram, and possible mechanisms for these phenomena are proposed.
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