A thermodynamic approach for the vapour phase epitaxial growth of Ga xIn 1− xAs from A Ga-In-H-Cl-As system

Abstract

The basic thermodynamic considerations of Ga x In 1− x As vapour phase epitaxy and the growth kinetics are discussed. Nucleation behaviour has been examined as a function of supercooling and substrate orientation using the classical theory of heterogeneous nucleation. A kinetic model for the deposition of Ga x In 1− x As which includes adsorption, formation of complex molecules and chemical reactions at the surface is presented. An expression for the deposition rate has been developed by following a reaction scheme. Numerical calculations of our theoretical predictions on the growth rate of Ga x In 1− x As have been made as a function of input parameters such as substrate temperature, composition and vapour pressure of the constituents and the results are compared with the available experimental data.