Abstract
The epitaxial nucleation and growth kinetics of InP deposition in an InPH 3HClH 2 system have been discussed. The classical theory of heterogeneous nucleation has been used to analyse the initial stages of InP epitaxy on the surface of the crystalline substrate and the effect of substrate orientation on the nucleation behaviour of InP has been explained. A kinetic model which includes a scheme of reactions has been developed for the deposition of InP with reaction constants and hence the growth rate of epitaxial InP has been investigated. The effects of various experimental parameters on the growth rate have been discussed.
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