Abstract
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.
Highlights
Ferroelectrics are characterized by the existence of spontaneous polarization which is switchable in an external electric field
The progressive miniaturization in those fields as well as the increasing demand for more and more functionality per chip yields new potential for ferroelectrics which can be integrated into CMOS manufacturing
Tetrakis(ethylmethylamino)hafnium (TEMAHf) and Tetrakis(ethylmethylamino)zirconium (TEMAZr) were used as precursors to deposit the HfxZr1-xO2 mixed films (HZO) films, while ozone was used as co-reactant
Summary
Ferroelectrics are characterized by the existence of spontaneous polarization which is switchable in an external electric field. Mostly restricted to discrete components, the usage of ferroelectric or antiferroelectric thin films spans from ultrasonic transducers and micro actuators to pyroelectric infrared sensors and high energy storage capacitors.[1] the progressive miniaturization in those fields as well as the increasing demand for more and more functionality per chip yields new potential for ferroelectrics which can be integrated into CMOS manufacturing. New tasks such as sensing and energy harvesting clearly reach beyond the pioneering memory applications
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